Term
|
Definition
| Field Effect Transistor, uses an electric field to control the shape and hence the electrical conductivity of a channel of one type of charge carrier in a semiconductor material. |
|
|
Term
|
Definition
| metal–oxide–semiconductor field-effect transistor |
|
|
Term
|
Definition
| Silicon on insulator, reduce parasitic device capacitance, |
|
|
Term
|
Definition
| or stray capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. Electric field causes charge carriers to build like a capacitor. |
|
|
Term
|
Definition
|
|
Term
|
Definition
|
|
Term
|
Definition
| adding dopant atoms to an intrinsic semiconductor, which changes the electron and hole carrier concentrations of the semiconductor at thermal equilibrium |
|
|
Term
|
Definition
| larger electron concentration than hole concentration, A common dopant for n-type silicon is phosphorus |
|
|
Term
|
Definition
| have a larger hole concentration than electron concentration, A common p-type dopant for silicon is boron. |
|
|
Term
|
Definition
| N channel Field Effect Transistor |
|
|
Term
|
Definition
| P channel field effect transistor |
|
|
Term
|
Definition
| junction gate field-effect transistor, three-terminal semiconductor devices that can be used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. |
|
|
