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EECS170C
BJT Characteristics
13
Electrical Engineering
Undergraduate 3
06/07/2010

Additional Electrical Engineering Flashcards

 


 

Cards

Term
Both Diodes Off
Definition

cut-off

 

Ic, Ie, Ib = 0

Term
Both Diodes On
Definition

Saturation

 

Vbe = 0.7

Vbc = 0.5

Vce = 0.2

 

No Constraints on Current

 

Term

B-E Juncion = ON

B-C Junction = OFF

Definition

Forward Active

Vbe=0.7, Vbc < 0.5

Vbe(on) - Vbc(on) = Vce(sat)

Ie = Ies(e(Vbe/Vt))

Ic=αf*Ies(e(Vbe/Vt))

Ib = (1-αf)Ies(e(Vbe/Vt))

 

Ic/Ib=αf/(1-αf) = βf (usually 100)

 

Ic/Ie = αf

Term

B-E Junction = Off

B-C Junction = On

Definition

reverse active


Ic = -Ics(e(Vbc/Vt))

Ie = -αr*Ics(e(Vbc/Vt))

Ib = (1-αr)Ics(e(Vbc/Vt))

 

Ie/Ib=αr/(1-αr) = βr (usually about 1)

Term

 

 

rΠ

Definition

 

 

rΠ=Vt/Ib = (βf*Vt)/Ic

Term

(bjt)

 

gm 

Definition

 

 

gm = Ic/Vt

Term

(bjt)

 

ro

Definition

 

 

ro = Va/Ic

Term

(bjt)

 

IcRc

Definition

 

 

IcRc = Vcc - Vout(opt) = 1/2[Vcc - Vce(sat)]

Term

(mosfet)

 

 

gm

Definition

 

 

gm = 2*Id/(Vgs-Vt)

Term

(mosfet)

 

 

ro

Definition

 

 

ro = 1/(λ * Id)

Term

 

 

 

Vin(dm)

Definition

 

 

Vin(dm) = Vin+ - Vin-

Term

 

 

 

Vin(cm)

Definition

 

 

 

Vin(cm) = (1/2)* ( Vin+ + Vin-)

Term

(bjt)

 

 

gm(Re) (for common collector)

Definition

 

 

gm(Re) = αf * Ie*Re/Vt

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